Publication | Open Access

Review of: "The changes in the width of the nano transistor channel due to the field effect of the gate around can cause undesirable changes and loss of mobility"

Electrical EngineeringNanoscale SystemEngineeringNanoelectronicsNanotechnologyBias Temperature InstabilityApplied PhysicsUndesirable ChangesNano Transistor ChannelField EffectSemiconductor Device