L. K. Bera

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

Navab Singh, Ajay Agarwal, L. K. Bera et al. · IEEE Electron Device Letters · 2006 · 639 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

Navab Singh, F. Y. Lim, Weiwei Fang et al. · 2006 · 156 citations

Engineering, Electrical Engineering, Materials Science +17

Strained-Si heterostructure field effect transistors

C. K. Maiti, L. K. Bera, Sanatan Chattopadhyay · Semiconductor Science and Technology · 1998 · 133 citations

Engineering, Materials Engineering, Materials Science +17

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

S. Tripathy, Vivian Kaixin Lin, Surani Bin Dolmanan et al. · Applied Physics Letters · 2012 · 106 citations

Engineering, Materials Science, Physics +17

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

Weiwei Fang, Navab Singh, L. K. Bera et al. · IEEE Electron Device Letters · 2007 · 83 citations

Engineering, Computer Engineering, Electrical Engineering +17