Concepedia

Snapback Device Protection

Snapback Device Protection is a semiconductor-based electrostatic discharge (ESD) protection mechanism that operates by exploiting the inherent bipolar transistor action within a MOSFET to trigger a low-impedance conduction path during voltage overstress events, thereby preventing damage to sensitive integrated circuit components.

39

Publications

972

Citations

133

Authors

37

Institutions

Publications per year

2017–2026

7

Parents

Publications

39

On a dual-polarity on-chip electrostatic discharge protection structure

A.Z.H. Wang, C.H. Tsay · IEEE Transactions on Electron Devices · 2001 · 97 citations

, , +13

Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC

Ming‐Dou Ker, Chung‐Yu Wu, Cheng Tao et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 1996 · 58 citations

, , +13

Design and analysis of new protection structures for smart power technology with controlled trigger and holding voltage

V. De Heyn, G. Groeseneken, B. Keppens et al. · 2002 · 53 citations

, , +12

A double RESURF LDMOS with drain profile engineering for improved ESD robustness

V. Parthasarathy, V. Khemka, Ronghua Zhu et al. · IEEE Electron Device Letters · 2002 · 49 citations

, , +13

A compact model for the grounded-gate nMOS behaviour under CDM ESD stress

C. Russ, K. Verhaege, Karlheinz Bock et al. · 2005 · 43 citations

, , +16

1–5 of 39

Authors

133

  1. GG
    G. Groeseneken

    IMEC, Belgium

    6 publications · 175 citations

    6

    h-index

  2. HM
    H.E. Maes

    IMEC, Belgium

    4 publications · 105 citations

    4

    h-index

  3. PH
    P. Hopper

    Texas Instruments (United States), United States

    4 publications · 63 citations

    4

    h-index

  4. JJ
    Juin J. Liou

    University of Central Florida, United States

    3 publications · 71 citations

    3

    h-index

  5. MN
    M. Natarajan

    IMEC, Belgium

    3 publications · 83 citations

    3

    h-index

1–5 of 133

Institutions

37

  1. Texas Instruments (United States)

    Dallas, United States

    9 h-index

    23 publications

    462 citations

  2. IMEC

    Leuven, Belgium

    6 h-index

    29 publications

    810 citations

  3. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    4 h-index

    11 publications

    349 citations

  4. Analog Devices (United States)

    Norwood, United States

    3 h-index

    12 publications

    288 citations

  5. Motorola (United States)

    Schaumburg, United States

    3 h-index

    12 publications

    384 citations

  6. University College London

    London, United Kingdom

    2 h-index

    2 publications

    49 citations

  7. University of Central Florida

    Orlando, United States

    2 h-index

    6 publications

    174 citations

  8. Dankook University

    Jukjeon-dong, South Korea

    2 h-index

    6 publications

    112 citations

1–8 of 37

Venues

  1. IEEE Electron Device Letters

    5 publications · 157 citations

    5

    h-index

  2. Electrical Overstress/Electrostatic Discharge Symposium

    Conference · 3 publications · 54 citations

    3

    h-index

  3. 3

    h-index

  4. Microelectronics Reliability

    2 publications · 30 citations

    2

    h-index

  5. IEEE Transactions on Electron Devices

    2 publications · 113 citations

    2

    h-index

1–5