B. Keppens

Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides

M. Mergens, C. Russ, K. Verhaege et al. · 2004 · 102 citations

Engineering, Vlsi Design, Power Electronics +19

Speed optimized diode-triggered SCR (DTSCR) for RF ESD protection of ultra-sensitive IC nodes in advanced technologies

M. Mergens, C. Russ, K. Verhaege et al. · IEEE Transactions on Device and Materials Reliability · 2005 · 98 citations

Engineering, Radio Frequency, Power Electronics +18

ESD protection solutions for high voltage technologies

B. Keppens, M. Mergens, Cong Son Trinh et al. · 2004 · 74 citations

Electrical Engineering, Esd Protection, Engineering +11

Design and analysis of new protection structures for smart power technology with controlled trigger and holding voltage

V. De Heyn, G. Groeseneken, B. Keppens et al. · 2002 · 53 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Influence of gate length on ESD-performance for deep sub micron CMOS technology

Karlheinz Bock, B. Keppens, V. De Heyn et al. · 2003 · 37 citations

Low-power Electronics, Electrical Engineering, Gate Length +12