Concepedia

Mask Error Correction

Mask Error Correction is a methodological framework in photolithography that identifies and rectifies geometric or patterning discrepancies in photomasks to ensure faithful transfer of integrated circuit designs onto semiconductor substrates.

62

Publications

1.4K

Citations

297

Authors

63

Institutions

Publications per year

2017–2026

3

Parents

Publications

62

<title>Mathematical and CAD framework for proximity correction</title>

Nicolas B. Cobb, Avideh Zakhor, Eugene A. Miloslavsky · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1996 · 99 citations

, , +15

Reduction Of Errors Of Microphotographic Reproductions By Optimal Corrections Of Original Masks

Bahaa E. A. Saleh, Soheil I. Sayegh · Optical Engineering · 1981 · 82 citations

, , +13

Integration of EUV lithography in the fabrication of 22-nm node devices

Obert R. Wood, Chiew-Seng Koay, Karen Petrillo et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2009 · 51 citations · Full text

, , +16

Projection Masking, Thin Photoresist Layers and Interference Effects

S. Middelhoek · IBM Journal of Research and Development · 1970 · 50 citations

, , +15

Predicting mask distortion, clogging and pattern transfer for stencil lithography

Maryna Lishchynska, Victor Bourenkov, M A F van den Boogaart et al. · Microelectronic Engineering · 2006 · 48 citations · Full text

, , +13

1–5 of 62

Authors

297

  1. LW
    Lars W. Liebmann

    IBM (United States), United States

    3 publications · 49 citations

    3

    h-index

  2. CA
    Chris A. Mack

    KLA (United States), United States

    3 publications · 59 citations

    3

    h-index

  3. KV
    Koen van Ingen Schenau

    ASML (Netherlands), Netherlands

    3 publications · 89 citations

    3

    h-index

  4. EF
    Evangeline F. Y. Young

    Chinese University of Hong Kong, Hong Kong SAR China

    3 publications · 95 citations

    3

    h-index

  5. RJ
    R. Jonckheere

    IMEC, Belgium

    2 publications · 42 citations

    2

    h-index

1–5 of 297

Institutions

63

  1. Mentor Technologies

    Tulsa, United States

    5 h-index

    14 publications

    263 citations

  2. IBM (United States)

    Armonk, United States

    5 h-index

    26 publications

    947 citations

  3. ASML (Netherlands)

    Veldhoven, The Netherlands

    5 h-index

    24 publications

    432 citations

  4. University of California, Berkeley

    Berkeley, United States

    4 h-index

    9 publications

    395 citations

  5. Chinese University of Hong Kong

    Hong Kong, Hong Kong

    3 h-index

    11 publications

    361 citations

  6. Samsung (South Korea)

    Seoul, South Korea

    3 h-index

    15 publications

    233 citations

  7. IMEC

    Leuven, Belgium

    3 h-index

    11 publications

    225 citations

  8. Carl Zeiss (Germany)

    Oberkochen, Germany

    2 h-index

    5 publications

    67 citations

1–8 of 63

Venues

  1. 16

    h-index

  2. 5

    h-index

  3. 3

    h-index

  4. Applied Optics

    2 publications · 52 citations

    2

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 2 publications · 29 citations

    2

    h-index

1–5