Concepedia

Etch Rate Modeling

Etch Rate Modeling is a computational framework that mathematically characterizes the spatial and temporal evolution of material removal during bulk micromachining processes by predicting etch rates as a function of process parameters, crystallographic orientation, and chemical conditions.

448

Publications

16.2K

Citations

1.2K

Authors

331

Institutions

Publications per year

2017–2026

34

Parents

Publications

448

The reaction of fluorine atoms with silicon

Daniel Flamm, Vincent M. Donnelly, J. A. Mucha · Journal of Applied Physics · 1981 · 332 citations

, , +17

Etching Mechanism of Vitreous Silicon Dioxide in HF-Based Solutions

D. Martin Knotter · Journal of the American Chemical Society · 2000 · 298 citations

, , +16

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 262 citations

, , +17

Supervisory run-to-run control of polysilicon gate etch using in situ ellipsometry

Stephanie Watts Butler, Jerry A. Stefani · IEEE Transactions on Semiconductor Manufacturing · 1994 · 226 citations

, , +14

Size Dependence of the Dissolution of ZnO Nanoparticles

Eric A. Meulenkamp · The Journal of Physical Chemistry B · 1998 · 211 citations

, , +17

1–5 of 448

Authors

1.2K

  1. BK
    Byungwhan Kim

    Sejong University, South Korea

    12 publications · 276 citations

    11

    h-index

  2. DH
    D. Hermsdorf

    Technische Universität Dresden, Germany

    9 publications · 200 citations

    9

    h-index

  3. KS
    K. Satō

    Nagoya University, Japan

    8 publications · 214 citations

    8

    h-index

  4. MA
    Miguel A. Gosálvez

    Nagoya University, Japan

    8 publications · 195 citations

    8

    h-index

  5. AE
    Alexander Efremov

    Ivanovo State University of Chemistry and Technology, Russia

    8 publications · 283 citations

    8

    h-index

1–5 of 1.2K

Institutions

331

  1. University of California, Berkeley

    Berkeley, United States

    16 h-index

    49 publications

    1.7K citations

  2. Centre National de la Recherche Scientifique

    Paris, France

    14 h-index

    45 publications

    1.1K citations

  3. Sejong University

    Seoul, South Korea

    10 h-index

    17 publications

    434 citations

  4. Philips (Netherlands)

    Amsterdam, The Netherlands

    9 h-index

    18 publications

    1.1K citations

  5. Texas Instruments (United States)

    Dallas, United States

    9 h-index

    22 publications

    1.2K citations

  6. Nagoya University

    Nagoya, Japan

    9 h-index

    14 publications

    313 citations

  7. Hitachi (Japan)

    Tokyo, Japan

    9 h-index

    33 publications

    748 citations

  8. Southeast University

    Nanjing, China

    8 h-index

    24 publications

    441 citations

1–8 of 331

Venues

  1. Journal of The Electrochemical Society

    JES · 56 publications · 1.8K citations

    27

    h-index

  2. Journal of Applied Physics

    36 publications · 2.1K citations

    23

    h-index

  3. 22

    h-index

  4. 18

    h-index

  5. Radiation Measurements

    21 publications · 500 citations

    15

    h-index

1–5