Hideki Satake

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

Tomohisa Mizuno, Shinichi Takagi, Naoharu Sugiyama et al. · IEEE Electron Device Letters · 2000 · 202 citations

Materials Engineering, Simox Technology, Electrical Engineering +11

NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON

Yuichiro Mitani, M. Nagamine, Hideki Satake et al. · 2003 · 88 citations

Electrical Engineering, Negative Bias Temperature, Engineering +13

Interfacial properties of single-crystalline CeO2 high-<i>k</i> gate dielectrics directly grown on Si (111)

Yukie Nishikawa, Takeshi Yamaguchi, Masahiko Yoshiki et al. · Applied Physics Letters · 2002 · 74 citations

Materials Science, Semiconductors, Electrical Engineering +13

Influence of Nitrogen on Negative Bias Temperature Instability in Ultrathin SiON

Yuichiro Mitani, Hideki Satake, Akira Toriumi · IEEE Transactions on Device and Materials Reliability · 2008 · 71 citations

Materials Science, Semiconductor Technology, Recovery Phenomenon +13

Applicability limits of the two-frequency capacitance measurement technique for the thickness extraction of ultrathin gate oxide

Akiko Nara, Naoki Yasuda, Hideki Satake et al. · IEEE Transactions on Semiconductor Manufacturing · 2002 · 60 citations

Engineering, Ultrathin Gate Oxide, Dielectric Layer Thickness +18