2003 · 88 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor ReliabilityActivation EnergyDevice DegradationGate Dielectric EngineeringGate DielectricsGate Oxide DegradationGate Oxide ReliabilityOxide DielectricsReliability Degradation Mechanisms
We have investigated the mechanism of negative bias temperature (NBT) degradation of p/sup +/-gate p-MOSFETs having SiON and SiO/sub 2/ films. As a result, it was found that NBT degradation of SiO/sub 2/ is improved by fluorine incorporation, while no effect is observed in that of SiON, and that the activation energy of NBT degradation in SiON is lower than that in SiO/sub 2/. From these experimental results, it is inferred that nitrogen-originated NBT degradation dominates NBT degradation in SiON. It was also found that non-energetic holes existing in the inversion layer contribute to NBT degradation for both SiON and SiO/sub 2/ films, and that the oxide field is indispensable for NBT degradation.
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