K. Uwasawa

Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's

T. Yamamoto, K. Uwasawa, Tohru Mogami · IEEE Transactions on Electron Devices · 1999 · 157 citations

Electrical Engineering, Negative Bias Temperature, Engineering +9

A new degradation mode of scaled p/sup +/ polysilicon gate pMOSFETs induced by bias temperature (BT) instability

K. Uwasawa, T. Yamamoto, Tohru Mogami · 2002 · 35 citations

Electrical Engineering, Engineering, Nanoelectronics +10

Scaling limitations of gate oxide in p/sup +/ polysilicon gate MOS structures for sub-quarter micron CMOS devices

K. Uwasawa, Tohru Mogami, T. Kunio et al. · 2002 · 25 citations

Gate Oxide Reliability, Engineering, Silicon On Insulator +16

Boron doping of silicon by ArF excimer laser irradiation in B2H6

Satoru Matsumoto, Shinichi Yoshioka, J. Wada et al. · Journal of Applied Physics · 1990 · 24 citations

Engineering, Laser Applications, Laser Ablation +19