M. Nagamine

Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes

Masayuki Yoshikawa, E. Kitagawa, T. Nagase et al. · IEEE Transactions on Magnetics · 2008 · 224 citations

Natural Sciences, Materials Engineering, Materials Science +14

Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

T. Kishi, H. Yoda, Tadashi Kai et al. · 2008 · 222 citations

Natural Sciences, Materials Engineering, Materials Science +17

High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

H. Yoda, T. Kishi, T. Nagase et al. · Current Applied Physics · 2009 · 178 citations

Natural Sciences, Materials Engineering, Materials Science +16

NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON

Yuichiro Mitani, M. Nagamine, Hideki Satake et al. · 2003 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Shell evolution beyond Z = 28 and N = 50: Spectroscopy of 81,82,83,84 Zn

C.M. Shand, Zs. Podolyák, M. Górska et al. · Physics Letters B · 2017 · 39 citations · Full text

Natural Sciences, Physics, Nuclear Chemistry +14