Masahiko Yoshiki

Interfacial properties of single-crystalline CeO2 high-<i>k</i> gate dielectrics directly grown on Si (111)

Yukie Nishikawa, Takeshi Yamaguchi, Masahiko Yoshiki et al. · Applied Physics Letters · 2002 · 75 citations

Engineering, Electrical Engineering, Materials Science +17

Grain‐Boundary‐Phase Identification of a Lead‐Based Relaxor by X‐ray Photoelectron Spectroscopy

Hideyuki Kanai, Masahiko Yoshiki, Masaru Hayashi et al. · Journal of the American Ceramic Society · 1994 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +14

Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B₁₂ Icosahedron as a Double Acceptor

Ichiro Mizushima, Atsushi Murakoshi, Masaharu Watanabe et al. · Japanese Journal of Applied Physics · 1994 · 37 citations

Engineering, Materials Engineering, Materials Science +16

Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system

Yushi Kato, H. Yoda, Y. Saito et al. · Applied Physics Express · 2018 · 37 citations

Natural Sciences, Materials Science, Physics +17

A Chiral Director Field in the Nematic Liquid Crystal Phase Induced by a Poly(.gamma.-benzyl glutamate) Chemical Reaction Alignment Film

Shigeru Machida, Taeko I. Urano, Kenji Sano et al. · Langmuir · 1995 · 32 citations

Natural Sciences, Chemistry, Materials Science +15