Yukie Nishikawa

Electrical Properties of Single Crystalline CeO₂High-k Gate Dielectrics Directly Grown on Si (111)

Yukie Nishikawa, Noburu Fukushima, Naoki Yasuda et al. · Japanese Journal of Applied Physics · 2002 · 82 citations

Semiconductors, Materials Science, Electrical Engineering +15

Interfacial properties of single-crystalline CeO2 high-<i>k</i> gate dielectrics directly grown on Si (111)

Yukie Nishikawa, Takeshi Yamaguchi, Masahiko Yoshiki et al. · Applied Physics Letters · 2002 · 74 citations

Materials Science, Semiconductors, Electrical Engineering +13

Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor deposition

Yukie Nishikawa, Yasuhiko Tsuburai, C. Nozaki et al. · Applied Physics Letters · 1988 · 53 citations

Materials Science, Materials Engineering, Aluminium Nitride +13

Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition

Mariko Suzuki, Yukie Nishikawa, Masayuki Ishikawa et al. · Journal of Crystal Growth · 1991 · 50 citations

Materials Engineering, Materials Science, Epitaxial Growth +11

A study of p-type doping for AlGaInP grown by low-pressure MOCVD

Yasuo Ohba, Yukie Nishikawa, C. Nozaki et al. · Journal of Crystal Growth · 1988 · 43 citations

Materials Science, P-type Doping, Materials Engineering +7