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Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringCrystal Growth TechnologyApplied PhysicsBand Gap EnergyCrystallographyIngaalp CrystalsChemical DepositionSubstrate MisorientationMolecular Beam EpitaxyOptoelectronicsChemical Vapor Deposition