Yasuhiko Tsuburai

Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor deposition

Yukie Nishikawa, Yasuhiko Tsuburai, C. Nozaki et al. · Applied Physics Letters · 1988 · 53 citations

Materials Science, Materials Engineering, Aluminium Nitride +13

Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layer

Masayuki Ishikawa, H. Shiozawa, Yasuhiko Tsuburai et al. · Electronics Letters · 1990 · 33 citations

Optical Materials, Room-temperature Cw Operation, Engineering +19

Effects of Zn Electrical Activity on Band Gap Energy in Zn-Doped InGaAlP Grown by Metalorganic Chemical Vapor Deposition

Yukie Nishikawa, Masayuki Ishikawa, Yasuhiko Tsuburai et al. · Japanese Journal of Applied Physics · 1989 · 14 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +11

Lattice constant shift in Zn-doped InGaAIP grown by low-pressure metalorganic chemical vapor deposition

Yukie Nishikawa, Masayuki Ishikawa, Yasuhiko Tsuburai et al. · Journal of Crystal Growth · 1990 · 14 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +9