C. Nozaki

Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

C. Nozaki, Yasuo Ohba, Hideto Sugawara et al. · Journal of Crystal Growth · 1988 · 70 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +9

Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor deposition

Yukie Nishikawa, Yasuhiko Tsuburai, C. Nozaki et al. · Applied Physics Letters · 1988 · 53 citations

Materials Science, Materials Engineering, Aluminium Nitride +13

InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer

Shinobu Fujita, T. Noda, C. Nozaki et al. · IEEE Electron Device Letters · 1993 · 44 citations

Semiconductors, Gate Contact, Electrical Engineering +12

A study of p-type doping for AlGaInP grown by low-pressure MOCVD

Yasuo Ohba, Yukie Nishikawa, C. Nozaki et al. · Journal of Crystal Growth · 1988 · 43 citations

Materials Science, P-type Doping, Materials Engineering +7

Diffuse scattering and superstructure reflections from In1−<i>y</i>(Al<i>x</i>Ga1−<i>x</i>)<i>y</i>P

S. Yasuami, C. Nozaki, Yasuo Ohba · Applied Physics Letters · 1988 · 37 citations

Optical Materials, Engineering, Alloy Systems +16