Yasuo Ohba - Concepedia

Author

Yasuo Ohba

Toshiba (Japan)

Also Known As

Y Ohba, Y. Ohba, Yasuo OHBA, Yasuo Ohba, Yasuo Ohba Yasuo Ohba

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)Tokushima University Tokushima Bunri University Tokyo Institute of Technology

About

Yasuo Ohba is an author at Toshiba (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	27	1.6K
2	Applied Physics	18	24	1.6K
3	Medicine	8	8	194
4	Biochemistry	5	5	116
5	Natural Sciences	3	3	85

Yasuo Ohba

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Role of Osteopontin in Bone Remodeling Caused by Mechanical Stress Kunihiro Terai, Teruko Takano‐Yamamoto, Yasuo Ohba, Journal of Bone and Mineral Research	1999	239
Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates Kazuhiko Itaya, Masaaki Onomura, Johji Nishio, Japanese Journal of Applied Physics Multi-quantum-well Laser DiodesEngineeringLaser ScienceLaser PhysicsLaser Applications	1996	226
Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique Miyoko Watanabe, Yasuo Ohba Applied Physics Letters EngineeringValence-band Discontinuity δEvSemiconductor MaterialsConduction-band Discontinuity δEcSemiconductor Device	1987	196
Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition Masayuki Ishikawa, Yasuo Ohba, Hideto Sugawara, Applied Physics Letters Dh WafersOptical MaterialsRoom-temperature Cw OperationEngineeringLaser Applications	1986	192
Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers Yasuo Ohba, M. Ishikawa, Hideto Sugawara, Journal of Crystal Growth Chemical EngineeringHigh-quality Ingaaip EpilayersEngineeringOptical PropertiesApplied Physics	1986	169
A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition Yasuo Ohba, Ako Hatano Ako Hatano Journal of Crystal Growth Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	1994	105
Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD C. Nozaki, Yasuo Ohba, Hideto Sugawara, Journal of Crystal Growth Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringPhysics	1988	70
Se-related deep levels in InGaAlP Miyoko Watanabe, Yasuo Ohba Journal of Applied Physics SemiconductorsDonor-related Deep LevelsElectrical EngineeringWide-bandgap SemiconductorEngineering	1986	68
Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio Yasuo Ohba, Rie Sato Journal of Crystal Growth Materials ScienceMaterials EngineeringAluminium NitrideEngineeringSapphire Substrates	2000	55
Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor deposition Yukie Nishikawa, Yasuhiko Tsuburai, C. Nozaki, Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideIi-vi SemiconductorEngineering	1988	53

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