Masaaki Onomura

Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

Kazuhiko Itaya, Masaaki Onomura, Johji Nishio et al. · Japanese Journal of Applied Physics · 1996 · 226 citations

Multi-quantum-well Laser Diodes, Engineering, Laser Science +20

Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD

Mariko Suzuki, Johji Nishio, Masaaki Onomura et al. · Journal of Crystal Growth · 1998 · 105 citations

Materials Engineering, Electrical Engineering, Engineering +6

Reduction of Schottky barrier heights by surface oxidation of GaAs and its influence on DLTS signals for the midgap level EL2

Fumio Hasegawa, Masaaki Onomura, Chikako Mogi et al. · Solid-State Electronics · 1988 · 40 citations

Midgap Level El2, Semiconductor Technology, Electrical Engineering +6

Thermal Analysis for GaN Laser Diodes

G. Hatakoshi, Masaaki Onomura, Masahiro Yamamoto et al. · Japanese Journal of Applied Physics · 1999 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Laser +12

Reactive Ion Beam Etching and Overgrowth Process in the Fabrication of InGaN Inner Stripe Laser Diodes

Shinya Nunoue, Masahiro Yamamoto, Mariko Suzuki et al. · Japanese Journal of Applied Physics · 1998 · 15 citations

Materials Science, Electrical Engineering, Ion Implantation +15