Shinya Nunoue

Development of InGaN-based red LED grown on (0001) polar surface

J. I. Hwang, Rei Hashimoto, S. Saito et al. · Applied Physics Express · 2014 · 260 citations

Optical Materials, Engineering, Al Content +17

Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

Kazuhiko Itaya, Masaaki Onomura, Johji Nishio et al. · Japanese Journal of Applied Physics · 1996 · 226 citations

Multi-quantum-well Laser Diodes, Engineering, Laser Science +20

InGaN Light-Emitting Diodes on<i>c</i>-Face Sapphire Substrates in Green Gap Spectral Range

S. Saito, Rei Hashimoto, J. I. Hwang et al. · Applied Physics Express · 2013 · 167 citations

White Oled, Photonics, Electrical Engineering +15

Luminescence Properties of Eu²⁺-Doped Green-Emitting Sr-Sialon Phosphor and Its Application to White Light-Emitting Diodes

Yumi Fukuda, Kunio Ishida, Iwao Mitsuishi et al. · Applied Physics Express · 2008 · 64 citations

Engineering, Optoelectronic Devices, Chemistry +20

Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

Tomonari Shioda, Hisashi Yoshida, Koichi Tachibana et al. · physica status solidi (a) · 2012 · 62 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14