Tomonari Shioda

Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

Tomonari Shioda, Hisashi Yoshida, Koichi Tachibana et al. · physica status solidi (a) · 2012 · 62 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

InP–InGaAsP Integrated 1 $\times$ 5 Optical Switch Using Arrayed Phase Shifters

Takuo Tanemura, Mitsuru Takenaka, Abdullah Al Amin et al. · IEEE Photonics Technology Letters · 2008 · 41 citations

Free-space Optical Network, Photonics, Optical Materials +11

Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

Tomonari Shioda, Yoshihiko Tomita, Masakazu Sugiyama et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2009 · 25 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki et al. · Journal of Crystal Growth · 2009 · 21 citations

Materials Science, Materials Engineering, Chemical Engineering +8

Abrupt InGaP∕GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy

Takayuki Nakano, Tomonari Shioda, Eiji Abe et al. · Applied Physics Letters · 2008 · 19 citations

Engineering, Chemistry, Gaas Layer +17