Mitsuru Takenaka

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Rui Zhang, Po-Chin Huang, Ju-Chin Lin et al. · IEEE Transactions on Electron Devices · 2013 · 200 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators

Mitsuru Takenaka, Shinichi Takagi · IEEE Journal of Quantum Electronics · 2011 · 42 citations

Optical Materials, Engineering, Optical Transmission System +16

InP–InGaAsP Integrated 1 $\times$ 5 Optical Switch Using Arrayed Phase Shifters

Takuo Tanemura, Mitsuru Takenaka, Abdullah Al Amin et al. · IEEE Photonics Technology Letters · 2008 · 41 citations

Free-space Optical Network, Photonics, Optical Materials +11

Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform

Yuki Ikku, Masafumi Yokoyama, Osamu Ichikawa et al. · Optics Express · 2012 · 40 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +18

Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO<inf>2</inf> interfacial layers

Yosuke Nakakita, Ryosho Nakane, Takashi Sasada et al. · 2008 · 36 citations

Materials Engineering, Interfacial Layers, Electrical Engineering +11