Osamu Ichikawa

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 162 citations

Materials Science, Electrical Engineering, Cycle Al2o3 Inter-layer +11

Structural basis of the collagen‐binding mode of discoidin domain receptor 2

Osamu Ichikawa, Masanori Osawa, N. Nishida et al. · The EMBO Journal · 2007 · 104 citations · Full text

High mobility CMOS technologies using III–V/Ge channels on Si platform

Shinichi Takagi, S.-H. Kim, Masafumi Yokoyama et al. · Solid-State Electronics · 2013 · 70 citations

Electrical Engineering, Si Platform, Engineering +4

High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and <inline-formula> <tex-math notation="TeX">$V_{\rm th}$ </tex-math></inline-formula> Tunability

Sanghyeon Kim, Masafumi Yokoyama, Ryosho Nakane et al. · IEEE Transactions on Electron Devices · 2014 · 63 citations

Tri-gate Inasoi Mosfets, Semiconductor Technology, Electrical Engineering +10

Inherently decoupled magnetic suspension in homopolar-type bearingless motors

Osamu Ichikawa, Akira Chibá, T. Fukao · IEEE Transactions on Industry Applications · 2001 · 53 citations

Electric Machine, Engineering, Motor Drive +16