Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

Kazuhiko Itaya, Masaaki Onomura, Johji Nishio, +11

Japanese Journal of Applied Physics

Multi-quantum-well Laser DiodesEngineeringLaser ScienceLaser PhysicsLaser Applications +18

Short-wavelength InGaAlP visible laser diodes

G. Hatakoshi, Kazuhiko Itaya, Masayuki Ishikawa, +2

IEEE Journal of Quantum Electronics

Short Wavelength OpticOptical MaterialsEngineeringLaser ScienceLaser Applications +15

Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers

Lisa Sugiura, Kazuhiko Itaya, Johji Nishio, +2

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringGrowth PitsNanoelectronicsMaterials Engineering +14

High-brightness InGaAlP green light-emitting diodes

Hideto Sugawara, Kazuhiko Itaya, H. Nozaki, +1

Applied Physics Letters

White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering +10

Temperature dependence of the threshold current for InGaAlP visible laser diodes

Masayuki Ishikawa, H. Shiozawa, Kazuhiko Itaya, +2

IEEE Journal of Quantum Electronics

EngineeringLaser ScienceThreshold-current Density DependenceTemperature DependenceLaser Physics +17

Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength

H. Okuda, Masayuki Ishikawa, H. Shiozawa, +6

IEEE Journal of Quantum Electronics

Optical MaterialsEngineeringLaser ApplicationsLaser MaterialHigh-power Lasers +21

Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes

Hideto Sugawara, Kazuhiko Itaya, G. Hatakoshi

Japanese Journal of Applied Physics

Materials SciencePhotonicsElectrical EngineeringSolid-state LightingEngineering +11

High-Efficiency InGaAlP Visible Light-Emitting Diodes

Hideto Sugawara, Kazuhiko Itaya, Masayuki Ishikawa, +1

Japanese Journal of Applied Physics

SemiconductorsPhotonicsElectrical EngineeringOptical MaterialsEngineering +13

Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes

Johji Nishio, Lisa Sugiura, Hidetoshi Fujimoto, +2

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringLaser MaterialSemiconductor LasersNanoelectronics +14

Characteristics of a distributed Bragg reflector for the visible-light spectral region using InGaAlP and GaAs: Comparison of transparent- and loss-type structures

Hideto Sugawara, Kazuhiko Itaya, G. Hatakoshi

Journal of Applied Physics

Optical MaterialsEngineeringOptical Transmission SystemIi-vi SemiconductorOptical Properties +17