Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

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Hole Compensation Mechanism of P-Type GaN Films

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Shortest wavelength semiconductor laser diode

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