Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers

The importance of lattice mismatch in the growth of Ga<i>x</i>In1−<i>x</i>P epitaxial crystals

G. B. Stringfellow · Journal of Applied Physics · 1972 · 306 citations

Natural Sciences, Materials Science, Physics +17

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Masayuki Ishikawa, Yasuo Ohba, Hideto Sugawara et al. · Applied Physics Letters · 1986 · 192 citations

Engineering, Electrical Engineering, Materials Science +17

Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures

H. Asahi, Yuichi Kawamura, Haruo Nagai · Journal of Applied Physics · 1983 · 74 citations

Engineering, Materials Engineering, Materials Science +17

MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasers

Isao Hino, T. Suzuki · Journal of Crystal Growth · 1984 · 54 citations

Engineering, Materials Engineering, Materials Science +16

Metalorganic vapor phase epitaxial growth of In1−xGaxP

Junji Yoshino, Takashi Iwamoto, Hiroshi Kukimoto · Journal of Crystal Growth · 1981 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +12