T. Nakanisi

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Masayuki Ishikawa, Yasuo Ohba, Hideto Sugawara et al. · Applied Physics Letters · 1986 · 192 citations

Dh Wafers, Optical Materials, Room-temperature Cw Operation +19

Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers

Yasuo Ohba, M. Ishikawa, Hideto Sugawara et al. · Journal of Crystal Growth · 1986 · 169 citations

Chemical Engineering, High-quality Ingaaip Epilayers, Engineering +8

Band discontinuity for GaAs/AlGaAs heterojunction determined by <i>C</i>-<i>V</i> profiling technique

Miyoko Watanabe, Jiro Yoshida, Masao Mashita et al. · Journal of Applied Physics · 1985 · 135 citations

Semiconductors, Band Discontinuity, Electrical Engineering +11

Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's

T. Nakanisi, Takashi Udagawa, Atsushi Tanaka et al. · Journal of Crystal Growth · 1981 · 104 citations

Electrical Engineering, Engineering, Rf Semiconductor +3

The growth and characterization of high quality MOVPE GaAs and GaAlAs

T. Nakanisi · Journal of Crystal Growth · 1984 · 78 citations

Materials Engineering, Materials Science, Electrical Engineering +4