Journal of Crystal Growth · 1984 · 78 citations · 33 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials CharacterizationSemiconductor MaterialsSemiconductor Crystal GrowthSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsSemiconductor CharacterizationWide-bandgap Materials Growth
33
High purity GaAs prepared from trimethylgallium and arsine
P.D. Dapkus, H. M. Manasevit, K. L. Hess et al. · Journal of Crystal Growth · 1981 · 197 citations