Takashi Udagawa - Concepedia

Author

Takashi Udagawa

Showa Denko (Japan)

Also Known As

T Udagawa, T. Udagawa, Takahiro Yajima, Takashi Sato, Takashi Udagawa

Publications

718

Citations

H-Index

Concepts

All Affiliations

Showa Denko (Japan)Toshiba (Japan)Toho University Meijo University The University of Tokyo

About

Takashi Udagawa is an author at Showa Denko (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	609
2	Applied Physics	11	12	521
3	Chemistry	5	5	287
4	Natural Sciences	1	1	33
5	Chemical Engineering	1	1	136

Takashi Udagawa

Publications

609

Citations

H-Index

Page 1

	Year	Citations
New Organic Metals Based on BETS Compounds with MX4− Anions (BETS = bis(ethylenedithio)tetraselenafulvalene; M = Ga, Fe, In; X = Cl, Br) Akiko Kobayashi, Takashi Udagawa, Hideto Tomita, Chemistry Letters EngineeringOrganic ChemistryBets CompoundsChemistrySharp Metal-insulator Transition	1993	136
Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's T. Nakanisi, Takashi Udagawa, Atsushi Tanaka, Journal of Crystal Growth Electrical EngineeringEngineeringRf SemiconductorApplied PhysicsHigh-purity Gaas Epilayers	1981	104
A New Organic Superconductor, λ-(BEDT-TSF)2GaCl4 Hayao Kobayashi, Takashi Udagawa, Hideto Tomita, Chemistry Letters Materials ScienceSuperconducting MaterialHigh-tc SuperconductivityEngineeringAbstract λ	1993	83
Development of high gradient zinc oxide nonlinear resistors and their application to surge arresters T. Imai, Takashi Udagawa, Hiroki ANDO, IEEE Transactions on Power Delivery Electrical EngineeringEngineeringTank-type Surge ArrestersSurge ArresterHigh Gradient Zinc	1998	73
AsH<sub>3</sub> to Ga(CH<sub>3</sub>)<sub>3</sub> Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs Miyoko Watanabe, Atsushi Tanaka, Takashi Udagawa, Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1983	47
New organic superconductor, λ-(BETS)2GaCl4 and metal-insulator transition of BETS conductor with magnetic anions (BETS=bis(ethlenedithio)tetraselenafulvalene) Hayao Kobayashi, Hideto Tomita, Takashi Udagawa, Synthetic Metals Superconducting MaterialHigh-tc SuperconductivityEngineeringPhysicsNatural Sciences	1995	33
Photothermal ionization identification of sulfur donors in GaAs T. S. Low, G. E. Stillman, T. Nakanisi, Applied Physics Letters Ii-vi SemiconductorElectrical EngineeringEpitaxial GrowthResidual DonorEngineering	1982	22
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy Daisuke Iida, Kensuke Nagata, Takafumi Makino, Applied Physics Express Materials EngineeringMaterials ScienceThermodynamic AnalysisIi-vi SemiconductorEngineering	2010	21
Organometallic Chemical Vapor Deposition Growth of Heterostructure of Wide Band Gap and Transparent Boron Phosphide on Silicon M. Odawara, Takashi Udagawa, Goro Shimaoka Japanese Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesChemistrySilicon On Insulator	2005	20
AlGaN/GaN HFETs on Fe‐doped GaN substrates Yoshinori Oshimura, Kenichiro Takeda, Takayuki Sugiyama, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringSurface Science	2010	18

Page 1