Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's

SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES

H. M. Manasevit · Applied Physics Letters · 1968 · 422 citations

Natural Sciences, Materials Engineering, Materials Science +15

The Use of Metal-Organics in the Preparation of Semiconductor Materials

H. M. Manasevit, W. I. Simpson · Journal of The Electrochemical Society · 1969 · 360 citations

Engineering, Chemistry, Materials Science +12

Electron Transport in GaAs

D. L. Rode, Stephen Knight · Physical review. B, Solid state · 1971 · 254 citations

Natural Sciences, Electrical Engineering, Physics +17

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of The Electrochemical Society · 1979 · 105 citations

Engineering, Materials Engineering, Materials Science +17

A new method for the growth of GaAs epilayer at low H2 pressure

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of Crystal Growth · 1978 · 77 citations

Engineering, Materials Engineering, Materials Science +14