Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD - Concepedia

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Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

70

Citations

6

References

1988

Year

C. Nozaki, Yasuo Ohba, Hideto Sugawara, S. Yasuami, T. Nakanisi

Journal of Crystal Growth

Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringPhysicsCrystal Growth TechnologyIngaalp AlloysApplied PhysicsCondensed Matter PhysicsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial Growth

References

	Year	Citations

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