Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor deposition

Abstract

Zn doping characteristics have been studied for In0.5(Ga1−xAlx)0.5P grown by low-pressure metalorganic chemical vapor deposition, using dimethylzinc (DMZ) as a Zn dopant source. Hole concentration decreased with increasing Al composition x. For low DMZ introduction, the Zn incorporation efficiency decreased with increasing x. For high DMZ introduction, hole concentration saturation occurred as a result of the fall in Zn electrical activity and the Zn electrical activity also decreased with increasing x.