IEEE Electron Device Letters · 1993 · 44 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor ReliabilitySemiconductor Thin FilmsStrain EngineeringSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersStrain EffectsStrained-layer HeterostructuresThermal TreatmentThreshold Voltage
The authors have fabricated an InGaAs/InAlAs HEMT structure with a strained InGaP Schottky contact layer to achieve selective wet gate recess etching and to improve reliability for thermal stress. Strained In/sub 0.75/Ga/sub 0.25/P grown on InAlAs has been revealed to have sufficient Schottky barrier height for use as a gate contact. Threshold voltage standard deviation has been reduced to one fifth that of a conventional InGaAs/InAlAs HEMT, as a result of successful selective recess etching. After thermal treatment at 300 degrees C for 5 min, the drain current and transconductance did not change, while those of the conventional HEMT decreased by more than 10%.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Defects in epitaxial multilayers
J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1974 · 1.5K citations
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations