Y. Ashizawa

Donor Levels in Si-Doped AlGaAs Grown by MBE

Miyoko Watanabe, K. Morizuka, Masao Mashita et al. · Japanese Journal of Applied Physics · 1984 · 94 citations

Engineering, Materials Engineering, Materials Science +17

LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors

Y. Ashizawa, Takao Noda, K. Morizuka et al. · Journal of Crystal Growth · 1991 · 54 citations

Engineering, Electrical Engineering, Materials Science +16

InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer

Shinobu Fujita, T. Noda, C. Nozaki et al. · IEEE Electron Device Letters · 1993 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases

Y. Ashizawa, Shahnaz Akbar, W. J. Schaff et al. · Journal of Applied Physics · 1988 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

Dislocation structure, formation, and minority-carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistors

Eugene A. Fitzgerald, D. G. Ast, Y. Ashizawa et al. · Journal of Applied Physics · 1988 · 26 citations

Engineering, Electrical Engineering, Physics +17