Japanese Journal of Applied Physics · 1984 · 94 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsActivation EnergyDoping Effects On Electronic PropertiesHall EffectHall Effect Current MeasurementHall Effect MeasurementsSemiconductor DopingSilicon DopingTransient Current Spectroscopy
Donor levels of MBE-grown Si-doped Al x Ga 1- x As have been characterized by a combination of the C-V method and capacitance and current transient spectroscopy. Although most electrons are supplied by so-called DX centers in the AlAs mole fraction (x) range of 0.3∼0.7 in this material, it is found that a small amount of shallow donors are still present. The concentrations of the DX center and the shallow donor are determined in detail as a function of AlAs mole fraction and Si doping level. The activation energy obtained by the Hall effect measurement is discussed in association with these data.
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