Yasuhito Zohta - Concepedia

Author

Yasuhito Zohta

Toshiba (Japan)

Also Known As

Y. Zohta, Yasuhito Zohta, Yasuhito Zohta Yasuhito Zohta

Publications

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)

About

Yasuhito Zohta is an author at Toshiba (Japan) specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	17	21	929
2	Engineering	15	19	858
3	Education	1	1	203
4	Natural Sciences	1	1	53
5	Chemical Engineering	1	1	94

Yasuhito Zohta

Publications

954

Citations

H-Index

Page 1

	Year	Citations
On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy Yasuhito Zohta, Miyoko Watanabe Journal of Applied Physics EngineeringMeasurementDeep CentersEducationCapacitance Transient Experiments	1982	203
Donor Levels in Si-Doped AlGaAs Grown by MBE Miyoko Watanabe, K. Morizuka, Masao Mashita, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringChemical EngineeringDonor Levels	1984	94
Frequency dependence of of Schottky barriers containing deep impurities Yasuhito Zohta Solid-State Electronics EngineeringPhysicsIntrinsic ImpurityApplied PhysicsCondensed Matter Physics	1973	77
Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors Y. Ohmura, Yasuhito Zohta, M. Kanazawa Solid State Communications Electrical EngineeringEngineeringApplied PhysicsShallow DonorsSemiconductor Material	1972	77
Shallow donor formation in Si produced by proton bombardment Y. Ohmura, Yasuhito Zohta, M. Kanazawa physica status solidi (a) Copeland MethodH BombardmentIon ImplantationExperimental Nuclear PhysicsNuclear Physics	1973	53
A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS Yasuhito Zohta Applied Physics Letters SemiconductorsCopeland MethodElectrical EngineeringWide-bandgap SemiconductorEngineering	1970	50
AsH<sub>3</sub> to Ga(CH<sub>3</sub>)<sub>3</sub> Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs Miyoko Watanabe, Atsushi Tanaka, Takashi Udagawa, Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1983	47
Effects of the Growth Conditions on Deep Level Concentration in MOCVD GaAs Miyoko Watanabe, Atsushi Tanaka, T. Nakanisi, Japanese Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1981	40
Rapid determination of semiconductor doping profiles in MOS structures Yasuhito Zohta Solid-State Electronics Semiconductor MaterialApplied PhysicsMos Structures	1973	38
DLTS Study of RIE-Induced Deep Levels in Si Using p<sup>+</sup>n Diode Arrays Miyoko Watanabe, Minoru Taguchi, Koichi Kanzaki, Japanese Journal of Applied Physics EngineeringOptoelectronic DevicesIntegrated CircuitsRie-induced Deep LevelsSilicon On Insulator	1983	37

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