Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors - Concepedia

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Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors

77

Citations

6

References

1972

Year

Y. Ohmura, Yasuhito Zohta, M. Kanazawa

Solid State Communications

Electrical EngineeringEngineeringApplied PhysicsShallow DonorsSemiconductor MaterialSemiconductor Device FabricationN-type Si LayersProton BombardmentSilicon On InsulatorSemiconductor Device

References

	Year	Citations

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