Y. Ohmura

Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors

Y. Ohmura, Yasuhito Zohta, M. Kanazawa · Solid State Communications · 1972 · 77 citations

Engineering, Materials Science, Physics +17

Shallow donor formation in Si produced by proton bombardment

Y. Ohmura, Yasuhito Zohta, M. Kanazawa · physica status solidi (a) · 1973 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +13

Surface modification of PET film by plasma-based ion implantation

N. Sakudo, D. Mizutani, Y. Ohmura et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 44 citations

Natural Sciences, Materials Science, Physics +15

Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO₂ Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate

Y. Ohmura, Yoshiaki Matsushita, Masahiro Kashiwagi · Japanese Journal of Applied Physics · 1982 · 43 citations

Engineering, Materials Engineering, Materials Science +17

Shallow Donor State Produced by Proton Bombardment of Silicon

Yasuhito Zohta, Y. Ohmura, M. Kanazawa · Japanese Journal of Applied Physics · 1971 · 33 citations

Natural Sciences, Materials Science, Inorganic Chemistry +8