Yoshiaki Matsushita - Concepedia

Author

Yoshiaki Matsushita

Toshiba (Japan)

Also Known As

Yoshiaki MATSUSHITA, Yoshiaki Matsushita

Publications

579

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)

About

Yoshiaki Matsushita is an author at Toshiba (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	533
2	Applied Physics	13	13	533
3	Materials Engineering	4	4	231
4	Electrical Engineering	2	2	69
5	Natural Sciences	1	1	13

Yoshiaki Matsushita

Publications

533

Citations

H-Index

Page 1

	Year	Citations
Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior Seigô Kishino, Yoshiaki Matsushita, Masaru Kanamori, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringOxygen ConcentrationEngineeringPhysics	1982	113
Carbon and oxygen role for thermally induced microdefect formation in silicon crystals Seigô Kishino, Yoshiaki Matsushita, Masaru Kanamori Applied Physics Letters Materials ScienceEngineeringNanomaterialsNanotechnologySilicon Crystals	1979	59
A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials Yoshiaki Matsushita, Seigô Kishino, Masaru Kanamori Japanese Journal of Applied Physics EngineeringCrystal Growth TechnologySilicon On InsulatorDefect ToleranceNanoelectronics	1980	55
Evidence of spontaneous formation of steps on silicon (100) Lei Zhong, A. Hojo, Yoshiaki Matsushita, Physical review. B, Condensed matter EngineeringMicroscopyFlat SiliconSilicon On InsulatorSilicene	1996	54
Thermally induced microdefects in Czochralski-grown silicon crystals Yoshiaki Matsushita Journal of Crystal Growth Materials ScienceEngineeringCrystal MaterialCrystal Growth TechnologyApplied Physics	1982	53
Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films Kikuo Yamabe, Kenji Taniguchi, Yoshiaki Matsushita Reliability physics EngineeringSilicon On InsulatorNanoelectronicsDielectric Breakdown FailuresElectronic Packaging	1983	48
Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO<sub>2</sub> Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate Y. Ohmura, Yoshiaki Matsushita, Masahiro Kashiwagi Japanese Journal of Applied Physics Materials ScienceSio 2Epitaxial GrowthEngineeringCrystalline Defects	1982	43
Photoluminescence Related to Dislocations in Annealed Czochralski-Grown Si Crystals Michio Tajima, Yoshiaki Matsushita Japanese Journal of Applied Physics SemiconductorsMaterials SciencePhotoluminescenceEngineeringDislocation Interaction	1983	26
Precise Control of Annealed Wafer For Nanometer Devices Yoshiaki Matsushita, Hiromi Nagahama, Ryuji Takeda, ECS Transactions EngineeringAtomic LevelWafer Scale ProcessingNanoelectronicsNanometrology	2006	21
Surface modification of silicon (111) by annealing at high temperature in hydrogen Lei Zhong, Ryuji Takeda, Koji Izunome, Applied Physics Letters EngineeringSilicon On InsulatorSingle StepsVicinal SiliconMaterials Science	1996	20

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