Masaru Kanamori - Concepedia

Author

Masaru Kanamori

NEC (Japan)

Also Known As

M. Kanamori, Masaru Kanamori

Publications

637

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)Photonics Electronics Technology Research Association

About

Masaru Kanamori is an author at NEC (Japan) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	596
2	Applied Physics	11	11	596
3	Materials Engineering	5	5	250
4	Chemistry	3	3	220
5	Electrical Engineering	3	3	80

Masaru Kanamori

Publications

596

Citations

H-Index

Page 1

	Year	Citations
Comparison of two kinds of oxygen donors in silicon by resistivity measurements Akihiro Kanamori, Masaru Kanamori Journal of Applied Physics Materials ScienceSemiconductorsOxygen DonorsEngineeringCrystalline Defects	1979	158
Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth Behavior Seigô Kishino, Yoshiaki Matsushita, Masaru Kanamori, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringOxygen ConcentrationEngineeringPhysics	1982	113
Carbon and oxygen role for thermally induced microdefect formation in silicon crystals Seigô Kishino, Yoshiaki Matsushita, Masaru Kanamori Applied Physics Letters Materials ScienceEngineeringNanomaterialsNanotechnologySilicon Crystals	1979	59
Heat-treatment behavior of microdefects and residual impurities in CZ silicon crystals Seigô Kishino, Masaru Kanamori, N. Yoshihiro, Journal of Applied Physics EngineeringResidual ImpuritiesCrystal Growth TechnologyIntegrated CircuitsSilicon On Insulator	1979	58
A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting Materials Yoshiaki Matsushita, Seigô Kishino, Masaru Kanamori Japanese Journal of Applied Physics EngineeringCrystal Growth TechnologySilicon On InsulatorDefect ToleranceNanoelectronics	1980	55
Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers Hideki Tsuya, Yojiro Kondo, Masaru Kanamori Japanese Journal of Applied Physics EngineeringSilicon On InsulatorThermal ConductivityWafer Scale ProcessingThermodynamics	1983	49
Photoluminescence analysis of annealed silicon crystals Michio Tajima, Seigô Kishino, Masaru Kanamori, Journal of Applied Physics Optical MaterialsEngineeringCrystal Growth TechnologyOptoelectronic DevicesChemistry	1980	42
Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment Masaru Kanamori, Hideki Tsuya Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceEngineeringGlassy CarbonCrystalline Defects	1985	20
Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate M. Kimura, Koji Egami, Masaru Kanamori, Applied Physics Letters Electrical EngineeringEngineeringMicrofabricationSurface ScienceApplied Physics	1983	18
Junction Leakage Current in BF<sup>+</sup> <sub>2</sub>-Implanted, Rapid-Thermal-Annealed Diodes H. Mikoshiba, H. Abiko, Masaru Kanamori Japanese Journal of Applied Physics Materials EngineeringElectrical EngineeringEngineeringNanoelectronicsBulk Leakage Component	1986	13

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