A. Hojo

Band discontinuity for GaAs/AlGaAs heterojunction determined by <i>C</i>-<i>V</i> profiling technique

Miyoko Watanabe, Jiro Yoshida, Masao Mashita et al. · Journal of Applied Physics · 1985 · 135 citations

Engineering, Electrical Engineering, Materials Science +17

Emitter&amp;#8212;Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristics

Jiro Yoshida, M. Kurata, K. Morizuka et al. · IEEE Transactions on Electron Devices · 1985 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of spontaneous formation of steps on silicon (100)

Lei Zhong, A. Hojo, Yoshiaki Matsushita et al. · Physical review. B, Condensed matter · 1996 · 54 citations

Natural Sciences, Materials Science, Physics +17

A sub-10-ns 16×16 multiplier using 0.6-μm CMOS technology

Y. Oowaki, Kenji Numata, Kenji Tsuchiya et al. · IEEE Journal of Solid-State Circuits · 1987 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +17

Fe-Doped High Purity GaAs as a Room Temperature Gamma-Ray Spectrometric Detector

Tomoyuki Kobayashi, Isamu Kuru, A. Hojo et al. · IEEE Transactions on Nuclear Science · 1976 · 21 citations

Engineering, Materials Engineering, Nuclear Engineering +12