Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO₂ Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate

Abstract

Single-crystal silicon films (200 nm thick) have been grown laterally by thermal annealing from amorphous silicon evaporated on a single-crystal (100) silicon substrate and implanted with ∼10 16 /cm 2 Si, onto an adjacent SiO 2 film by solid-phase epitaxy. The key requirements for this kind of lateral epitaxy appear to be a high-dose Si ion implanatation and low temperature (575°C) annealing for a long period in order to suppress the nucleation of randomly-oriented crystals on the SiO 2 film.