LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors

Mechanism of carbon incorporation in MOCVD GaAs

T. F. Kuech, E. Veuhoff · Journal of Crystal Growth · 1984 · 226 citations

Semiconductor Technology, Electrical Engineering, Engineering +3

Hydrogen passivation of shallow-acceptor impurities in<i>p</i>-type GaAs

N. M. Johnson, R. D. Burnham, R. A. Street et al. · Physical review. B, Condensed matter · 1986 · 191 citations

Semiconductors, Hydrogen Passivation, Electrical Engineering +13

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Semiconductors, Materials Science, Electrical Engineering +10

Carbon diffusion in undoped, <i>n</i>-type, and <i>p</i>-type GaAs

Brian T. Cunningham, L. J. Guido, J. E. Baker et al. · Applied Physics Letters · 1989 · 168 citations

Semiconductors, Semiconductor Technology, Chemical Engineering +11

Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

Takumi Yamada, Eisuke Tokumitsu, Koki Saito et al. · Journal of Crystal Growth · 1989 · 125 citations

Electrical Engineering, Engineering, P-type Gaas +4