R. D. Burnham

Hydrogen passivation of shallow-acceptor impurities in<i>p</i>-type GaAs

N. M. Johnson, R. D. Burnham, R. A. Street et al. · Physical review. B, Condensed matter · 1986 · 191 citations

Semiconductors, Hydrogen Passivation, Electrical Engineering +13

Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in Al<i>x</i>Ga1−<i>x</i> As-GaAs quantum-well heterostructures

L. J. Guido, N. Holonyak, K. C. Hsieh et al. · Journal of Applied Physics · 1987 · 150 citations

Semiconductors, Materials Science, Aluminium Nitride +14

Ultraviolet-preionized discharge-pumped lasers in XeF, KrF, and ArF

R. D. Burnham, N. Djeu · Applied Physics Letters · 1976 · 148 citations

Photonics, Engineering, Physics +14

Discharge pumped mercuric halide dissociation lasers

R. D. Burnham · Applied Physics Letters · 1978 · 123 citations

Photonics, Laser Efficiency, Engineering +11

Disorder of an Al<i>x</i>Ga1−<i>x</i>As-GaAs superlattice by donor diffusion

Kathleen Meehan, N. Holonyak, Judith M. Brown et al. · Applied Physics Letters · 1984 · 116 citations

Engineering, Laser Applications, Laser Material +17