K. C. Hsieh

Luminescence quenching and the formation of the GaP1−<i>x</i>N<i>x</i> alloy in GaP with increasing nitrogen content

James N. Baillargeon, K. Y. Cheng, G. E. Höfler et al. · Applied Physics Letters · 1992 · 218 citations

Optical Materials, Engineering, Solid-state Chemistry +19

Stripe-geometry quantum well heterostructure Al<i>x</i>Ga1−<i>x</i>As-GaAs lasers defined by defect diffusion

D.G. Deppe, L. J. Guido, N. Holonyak et al. · Applied Physics Letters · 1986 · 191 citations

Semiconductors, Photonics, Electrical Engineering +14

Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in Al<i>x</i>Ga1−<i>x</i> As-GaAs quantum-well heterostructures

L. J. Guido, N. Holonyak, K. C. Hsieh et al. · Journal of Applied Physics · 1987 · 150 citations

Semiconductors, Materials Science, Aluminium Nitride +14

Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

M. Hong, Zheng‐Hong Lu, J. Kwo et al. · Applied Physics Letters · 2000 · 80 citations

Engineering, Crystal Growth Technology, Chemical Composition +17

Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing

P. Gavrilovič, F. P. Dabkowski, Kathleen Meehan et al. · Journal of Crystal Growth · 1988 · 78 citations

Materials Science, Materials Engineering, Mocvd-grown Gainp +10