Publication | Closed Access
Stripe-geometry quantum well heterostructure Al<i>x</i>Ga1−<i>x</i>As-GaAs lasers defined by defect diffusion
191
Citations
15
References
1986
Year
SemiconductorsPhotonicsElectrical EngineeringSemiconductor TechnologyEngineeringCrystalline DefectsPhysicsSemiconductor LasersHeterostructure LasersApplied PhysicsQuantum MaterialsMultilayer HeterostructuresOptoelectronic DevicesSio2 DefectOptoelectronicsDefect DiffusionCompound Semiconductor
Impurity-free selective layer disordering, utilizing Si3N4 masking stripes and SiO2 defect (vacancy) sources, is used to realize room-temperature continuous AlxGa1−xAs-GaAs quantum well heterostructure lasers.
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