Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP

Abstract

GaInP material has been used as a high-gap semiconductor on InP to fabricate Schottky diodes. The experimental results show that the devices exhibit good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a gallium composition of 100% and a GaP thickness of 11 Å, and exhibits a barrier height of 0.8 eV, an ideality factor of 1.1, and a reverse current of 0.1 nA at −1 V. A high electron mobility transistor has been fabricated on an InP substrate by molecular beam epitaxy using a high-gap GaInP material, and a transconductance of 300 mS/mm has been measured on a device of 1.3 μm gate length.