L. Henry - Concepedia

Author

L. Henry

Texas Instruments (United States)ORCID

Also Known As

Henry, Léo, L Henry, L. G. Henry, L. Henry, L.G Henry, L.G. Henry, Leo G Henry, Leo G. Henry, Léo Henry

101

Publications

958

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)Centre Hospitalier Lannion Trestel Aptiv (United States)Hewlett-Packard (United States)Centre National de la Recherche Scientifique

About

L. Henry is an author at Texas Instruments (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	707
2	Applied Physics	11	11	313
3	Education	6	6	307
4	Biostatistics	2	2	69
5	Chemistry	1	1	11

L. Henry

Publications

727

Citations

H-Index

Page 1

	Year	Citations
TLP calibration, correlation, standards, and new techniques Jon Barth, K. Verhaege, L. Henry, IEEE Transactions on Electronics Packaging Manufacturing EngineeringMeasurementMeasurement Standards (Educational Assessment)EducationTransmission System	2001	189
Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas L. Henry, P. Granjoux Electronics Letters Iii–v Compound SemiconductorsEngineeringDevice IntegrationOptoelectronic DevicesReactive Ion	1987	63
Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires A. Izraël, B. Sermage, J. Y. Marzin, Applied Physics Letters Electrical EngineeringOptical MaterialsEngineeringEpitaxial GrowthPhysics	1990	56
TLP calibration, correlation, standards, and new techniques [ESD test] Jon Barth, K. Verhaege, L. Henry, EngineeringMeasurementEducationTransmission SystemTlp Data	2002	51
Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP S. Loualiche, A. Ginudi, Alain Le Corre, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	1989	35
1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer A. Godefroy, Alain Le Corre, Fabrice Clérot, IEEE Photonics Technology Letters PhotonicsOptical MaterialsEngineeringOptical AmplificationOptical Properties	1995	34
GaInAs junction FET fully dry etched by metal organic reactive ion etching technique D. Lecrosnier, L. Henry, Alain Le Corre, Electronics Letters Materials ScienceMaterials EngineeringElectrical EngineeringEtching TechniqueEngineering	1987	30
Developing a transient induced latch-up standard for testing integrated circuits Mary Alexandria Kelly, L. Henry, Jon Barth, Electrical EngineeringLatch EventEngineeringHardware-in-the-loop SimulationCircuit System	2003	25
Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT S. Loualiche, A. Ginudi, Alain Le Corre, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSchottky Barrier HeightEngineering	1990	21
Standardization of the transmission line pulse (TLP) methodology for electrostatic discharge (ESD) Steven H. Voldman, R.A. Ashton, Jon Barth, Electrical Overstress/Electrostatic Discharge Symposium Transmission Line PulseElectrical EngineeringEngineeringNondestructive TestingElectrostatic Discharge	2003	21

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