Publication | Closed Access
Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas
63
Citations
4
References
1987
Year
Iii–v Compound SemiconductorsEngineeringDevice IntegrationOptoelectronic DevicesReactive IonSemiconductorsElectronic DevicesWafer Scale ProcessingNew ProcessElectronic PackagingCompound SemiconductorMaterials ScienceElectrical EngineeringOptoelectronic MaterialsEtching GasSemiconductor Device FabricationPlasma EtchingElectronic MaterialsMicrofabricationApplied PhysicsNovel ProcessOptoelectronicsChemical Vapor Deposition
A new process for RIE of III–V compound semiconductors using mixtures of CH4, Ar and H2 as the etching gas is presented. This process can be successfully applied to most III-V materials used in micro-optoelectronic technology
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