Publication | Closed Access
Lattice constant shift in Zn-doped InGaAIP grown by low-pressure metalorganic chemical vapor deposition
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Citations
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References
1990
Year
Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringLattice Constant ShiftSurface ScienceApplied PhysicsZn-doped IngaaipMolecular Beam EpitaxyOptoelectronicsChemical Vapor DepositionCompound Semiconductor
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