Effects of Zn Electrical Activity on Band Gap Energy in Zn-Doped InGaAlP Grown by Metalorganic Chemical Vapor Deposition

Abstract

The effects of Zn electrical activity on band gap energy (Eg) and atomic arrangements have been studied for Zn-doped InGaAlP, grown by low-pressure metalorganic chemical vapor deposition. The Eg value increased with decreasing Zn electrical activity. The ordered structure on the column III sublattice was observed in samples whose Zn electrical activity was unity. The sample, which contained a sufficiently large amount of electrically inactive Zn, did not have the ordered structure. It is found that Eg and atomic arrangements are greatly affected by the amount of electrically inactive Zn.