Publication | Closed Access
Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B<sub>12</sub> Icosahedron as a Double Acceptor
37
Citations
11
References
1994
Year
EngineeringCubic Boron NitrideSemiconductor DeviceBoropheneIon ImplantationBoron NitrideHexagonal Boron NitrideNanoelectronicsHeavy DopingIcosahedron ActsMaterials ScienceMaterials EngineeringHole GenerationSemiconductor TechnologyCrystalline DefectsPhysicsB 12Semiconductor Device FabricationDouble AcceptorMicroelectronicsApplied PhysicsOptoelectronics
A high hole concentration region of about 1×10 21 cm -3 was generated without any post-annealing by the implantation of high doses of boron into silicon substrates. X-ray photoelectron spectroscopy (XPS) measurement and Fourier transform IR spectroscopy (FTIR) absorption spectra revealed that B 12 icosahedra were created in as-implanted samples. A new model of the generation of holes is proposed in which B 12 icosahedron acts as a double acceptor.
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